Reliability of electron devices, failure physics and analysisGROESENEKEN, Guido; MAES, Herman E; MOUTHAAN, Anton J et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, issn 0026-2714, 352 p.Conference Proceedings

Effects of metallization lay-out on turn-off failure of modern power bipolar transistorsBUSATTO, G; CONTE, A; PATTI, A et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1867-1870, issn 0026-2714Conference Paper

Influence of the ferroelectric domain structure and switching properties on the endurance of PZT ferroelectric capacitorsWOUTERS, D. J; MAES, H. E.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1763-1766, issn 0026-2714Conference Paper

Quality and reliability improvement through defect oriented failure analysisDE PAUW, P; VAN HAEVERBEKE, S.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1835-1838, issn 0026-2714Conference Paper

The GaAs heterojunction bipolar transistor : An electron device with optical device reliabilityHENDERSON, T. S.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1879-1886, issn 0026-2714Conference Paper

The application of advanced techniques for complex focused-ion-beam device modificationABRAMO, M. T; HAHN, L. L.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1775-1778, issn 0026-2714Conference Paper

The influence of process variations on the robustness of an audio power ICKRABBENBORG, B; VAN DER POL, J.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1819-1822, issn 0026-2714Conference Paper

AC effects in IC reliabilityHU, C.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1611-1617, issn 0026-2714Conference Paper

Copper interconnection lines : SARF characterization and lifetime testCIOFI, C; DATTILO, V; NERI, B et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1747-1750, issn 0026-2714Conference Paper

Designing circuits and processes to optimize performance and reliability : Metallurgy meets TCADTHOMPSON, C. V; KNOWLTON, B. D.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1683-1690, issn 0026-2714Conference Paper

Question marks to the extrapolation to lower temperatures in high temperature storage life (HSTL) testing in plastic encapsulated IC'sSCHUDDEBOOM, W; WÜBBENHORST, M.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1935-1938, issn 0026-2714Conference Paper

A new wafer level reliability method for evaluation of ionic induced pMOSFET drift effectsDREIZNER, A; NAGEL, J; SCHARFE, R et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1855-1858, issn 0026-2714Conference Paper

A practical system for hot spot detection using fluorescent microthermal imagingGLACET, J.-Y; BERNE, S.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1811-1814, issn 0026-2714Conference Paper

Comprehensive gate-oxide reliability evaluation for DRAM processesVOLLERSTEN, R. P; ABADEER, W. W.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1631-1638, issn 0026-2714Conference Paper

Characterisation of chip-on-board and flip chip packaging technologies by acoustic microscopyLAWTON, W; BARRETT, J.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1803-1806, issn 0026-2714Conference Paper

ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC'sKER, M.-D; YU, T.-L.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1727-1730, issn 0026-2714Conference Paper

Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled techniqueKER, M.-D; WU, C.-N.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1731-1734, issn 0026-2714Conference Paper

Finite element investigations of mechanical stress in metallization structuresWEIDE, K; YU, X; MENHORN, F et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1703-1706, issn 0026-2714Conference Paper

Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults : A characterization case study using atomic force microscopyJACOB, P; HOEPPNER, K.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1783-1786, issn 0026-2714Conference Paper

Wafer level reliability : Process control for reliabilityTURNER, T. E.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1839-1846, issn 0026-2714Conference Paper

Automotive and aerospace electronic systems. Dependability requirementsROSE, P. D.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1923-1929, issn 0026-2714Conference Paper

Pulsed thermal characterization of a reverse biased PN-junction for ESD HBM simulationWOLF, H; GIESER, H; WILKENING, W et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1711-1714, issn 0026-2714Conference Paper

Relationship between profile of stress-generated interface traps and degradation of submicron LDD MOSFET'sOKHONIN, S; HESSLER, T; DUTOIT, M et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1671-1674, issn 0026-2714Conference Paper

Study of the soft leakage current induced ESD on LDD transistorWADA, T.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1707-1710, issn 0026-2714Conference Paper

Wafer level measurement system for SARF characterization of metal linesCIOFI, C; DE MARINIS, M; NERI, B et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1851-1854, issn 0026-2714Conference Paper